COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC CIRCUIT
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United States of America Patent
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Issued Date -
May 2, 2013
app pub date -
Sep 13, 2012
filing date -
Nov 2, 2011
priority date (Note) -
Abandoned
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Abstract
A compound semiconductor device includes: a first compound semiconductor layer in which carriers are formed; a second compound semiconductor layer, provided above the first compound semiconductor layer, to supply the carriers; and a third compound semiconductor layer provided above the second compound semiconductor layer, wherein the third compound semiconductor layer includes a area that has a carrier concentration higher than a carrier concentration of the second compound semiconductor layer.
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