Semiconductor device
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United States of America Patent
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Nov 18, 2014
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app pub date -
Oct 25, 2012
filing date -
Oct 28, 2011
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Abstract
Reliability of a semiconductor device is improved by suppressing reverse voltage deterioration at the time of reverse bias junction barrier Schottky diode using a substrate containing SiC. In a JBS diode having an active area of 0.1 cm2 or more, an area of a Schottky interface at which a drift layer and a Schottky electrode are contacted can be sufficiently reduced by relatively increasing a ratio of p-type semiconductor region being a junction barrier region in an active region, and thereby deterioration in reverse voltage caused by defects existing in the drift layer is prevented.
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