Trench type Schottky junction semiconductor device and manufacturing method thereof
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United States of America Patent
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Oct 13, 2015
Grant Date -
May 2, 2013
app pub date -
Oct 31, 2012
filing date -
Oct 31, 2011
priority date (Note) -
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Abstract
A Schottky junction type semiconductor device in which the opening width of a trench can be decreased without deteriorating the withstanding voltage. The cross sectional shape of a trench has a shape of a sub-trench in which the central portion is higher and the periphery is lower at the bottom of the trench, and a p type impurity is introduced vertically to the surface of the drift layer thereby forming a p+ SiC region, which is formed in contact to the inner wall of the trench having the sub-trench disposed therein, such that the junction position is formed more deeply in the periphery of the bottom of the trench than the junction position in the central portion of the bottom of the trench.
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