substrate, and epitaxial wafer

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United States of America Patent

PATENT NO 8937339
SERIAL NO

13715254

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Abstract

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Si(1-v-w-x)CwAlxNv crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si(1-v-w-x)CwAlxNv substrate, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer are provided.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO ELECTRIC INDUSTRIES LTDOSAKA-SHI OSAKA 541-0041

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujiwara, Shinsuke Itami, JP 102 694
Miyanaga, Michimasa Osaka, JP 46 852
Nakahata, Hideaki Itami, JP 123 1415
Satoh, Issei Itami, JP 33 156

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