Compound semiconductor device and method of manufacturing the same
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United States of America Patent
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May 3, 2016
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N/A
app pub date -
Dec 18, 2012
filing date -
Oct 2, 2009
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Abstract
An intermediate layer composed of i-AlN is formed between a channel layer and an electron donor layer, a first opening is formed in an electron donor layer, at a position where a gate electrode will be formed later, while using an intermediate layer as an etching stopper, a second opening is formed in the intermediate layer so as to be positionally aligned with the first opening, by wet etching using a hot phosphoric acid solution, and a gate electrode is formed so that the lower portion thereof fill the first and second openings while placing a gate insulating film in between, and so that the head portion thereof projects above the cap structure.
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