Threshold voltage adjustment for thin body MOSFETs
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United States of America Patent
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May 26, 2015
Grant Date -
May 2, 2013
app pub date -
Oct 27, 2011
filing date -
Oct 27, 2011
priority date (Note) -
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Abstract
A structure includes a substrate; a transistor disposed over the substrate, the transistor comprising a fin comprised of Silicon that is implanted with Carbon; and a gate dielectric layer and gate metal layer overlying a portion of the fin that defines a channel of the transistor. In the structure a concentration of Carbon within the fin is selected to establish a desired voltage threshold of the transistor. Methods to fabricate a FinFET transistor are also disclosed. Also disclosed is a planar transistor having a Carbon-implanted well where the concentration of the Carbon within the well is selected to establish a desired voltage threshold of the transistor.
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