INPUT/OUTPUT ELECTROSTATIC DISCHARGE DEVICE WITH REDUCED JUNCTION BREAKDOWN VOLTAGE
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United States of America Patent
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app pub date -
Dec 19, 2012
filing date -
Aug 16, 2009
priority date (Note) -
Abandoned
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Abstract
An I/O electrostatic discharge (ESD) device having a gate electrode over a substrate, a gate dielectric layer between the gate electrode and the substrate, a pair of sidewall spacers respectively disposed on two opposite sidewalls of the gate electrode, a first lightly doped drain (LDD) region disposed under one of the sidewall spacers, a source region disposed next to the first LDD region, a second LDD region disposed under the other sidewall spacer, and a drain region disposed next to the second LDD region. The I/O ESD device has an asymmetric LDD configuration. In one embodiment, a junction of the second LDD region is shallower than that of the first LDD region.
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