Semiconductor apparatus
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United States of America Patent
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May 27, 2014
Grant Date -
May 2, 2013
app pub date -
Jul 18, 2012
filing date -
Oct 26, 2011
priority date (Note) -
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Abstract
A semiconductor apparatus includes a semiconductor substrate. The semiconductor substrate includes an active region in which a semiconductor device is formed, and a peripheral region which is located between the active region and an edge surface of the semiconductor substrate. A first insulating layer including conductive particles is formed above at least a part of the peripheral region. By constructing the semiconductor apparatus in this manner, generation of a high electric field in the peripheral region can be suppressed. Therefore, voltage endurance characteristics of the semiconductor apparatus can be improved.
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