Simplified pitch doubling process flow

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United States of America Patent

PATENT NO 9184159
APP PUB NO 20130105937A1
SERIAL NO

13725915

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Abstract

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A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces. The method further comprises selectively etching photoresist material.

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U S BANK NATIONAL ASSOCIATION AS COLLATERAL AGENT100 WALL STREET SUITE 1600 NEW YORK NY 10005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Alapati, Ramakanth Boise, US 56 1433
Niroomand, Ardavan Boise, US 46 1509
Zhou, Baosuo Redwood City, US 38 2111

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