FinFET devices

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United States of America Patent

PATENT NO 9293584
APP PUB NO 20130105942A1
SERIAL NO

13287331

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Abstract

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Disclosed are various embodiments of FinFET semiconductor devices. A pair of matched capacitors can be formed that share a common source, drain and/or channel. Accordingly, the capacitance characteristics of each capacitor can be manufactured such that they are similar to one another. A resistor manufactured by employing FinFET techniques is also described. The resistor can be manufactured with an effective length that is greater than a distance traversed along a substrate by the resistor.

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Patent Owner(s)

Patent OwnerAddress
AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LIMITEDSINGAPORE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Henry Irvine, US 209 4696
Chen, Xiangdong Irvine, US 216 2796
Woo, Agnes Encino, US 14 442
Xia, Wei Irvine, US 153 1548

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