Performing forming processes on resistive memory
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United States of America Patent
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May 20, 2014
Grant Date -
May 2, 2013
app pub date -
Nov 1, 2011
filing date -
Nov 1, 2011
priority date (Note) -
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Abstract
The present disclosure includes apparatuses and methods for performing forming processes on resistive memory. A number of embodiments include applying a formation signal to the storage element of a resistive memory cell, wherein the formation signal includes a first portion having a first polarity and a first amplitude, a second portion having a second polarity and a second amplitude, wherein the second polarity is opposite the first polarity and the second amplitude is smaller than the first amplitude, and a third portion having the first polarity and a third amplitude that is smaller than the first amplitude.
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