Modified reset state for enhanced read margin of phase change memory

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United States of America Patent

PATENT NO 8908414
SERIAL NO

13512006

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Abstract

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Subject matter disclosed herein relates to techniques involving a structural relaxation (SR) phenomenon for increasing resistance of a Reset state of phase change memory.

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U S BANK NATIONAL ASSOCIATION AS COLLATERAL AGENT100 WALL STREET SUITE 1600 NEW YORK NY 10005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Boniardi, Mattia Milan, IT 42 136
Ielmini, Daniele Bergamo, IT 9 78
Pellizzer, Fabio Cornate d'Adda, IT 328 3376
Pirovano, Agostino Milan, IT 149 1272
Redaelli, Andrea Calolziocorte, IT 157 1129

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