Nonvolatile Memory And Writing Method Thereof, And Semiconductor Device

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United States of America Patent

SERIAL NO

13687013

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Abstract

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A write-once memory can be written only once to each memory cell; therefore, a defective bit cannot be detected by an actual inspection of writing. Accordingly, as described above, the measures, in which a redundant circuit is provided and the defective bit is modified before shipping, cannot be taken; thus, it is difficult to provide a memory with few defects. It is an object of the present invention to provide a write-once memory where the probability of a defect is reduced considerably. A nonvolatile memory that can be written only once includes a redundant memory cell, a first circuit which allocates an address to the redundant memory cell, a second circuit which outputs a determination signal that expresses whether writing is performed normally or not, and a third circuit, to which the determination signal is inputted, which controls the first circuit and the second circuit.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDJAPAN'S KANAGAWA PREFECTURE ATSUGI CITY ATSUGI-SHI KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kato, Kiyoshi Atsugi, JP 545 11857

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