High fidelity patterning employing a fluorohydrocarbon-containing polymer
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United States of America Patent
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Dec 23, 2014
Grant Date -
May 2, 2013
app pub date -
Oct 26, 2011
filing date -
Oct 26, 2011
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Abstract
A stack of a hard mask layer, a soft mask layer, and a photoresist is formed on a substrate. The photoresist is patterned to include at least one opening. The pattern is transferred into the soft mask layer by an anisotropic etch, which forms a carbon-rich polymer that includes more carbon than fluorine. The carbon-rich polymer can be formed by employing a fluorohydrocarbon-containing plasma generated with fluorohydrocarbon molecules including more hydrogen than fluorine. The carbon-rich polymer coats the sidewalls of the soft mask layer, and prevents widening of the pattern transferred into the soft mask. The photoresist is subsequently removed, and the pattern in the soft mask layer is transferred into the hard mask layer. Sidewalls of the hard mask layer are coated with the carbon-rich polymer to prevent widening of the pattern transferred into the hard mask.
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