Method for manufacturing silicon carbide substrate and method for manufacturing semiconductor device
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United States of America Patent
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Mar 3, 2015
Grant Date -
May 2, 2013
app pub date -
Jul 6, 2011
filing date -
Jul 29, 2010
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Abstract
A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5° or smaller in an orthogonal projection to a plane including a <01-10> direction and a <0001> direction. In this way, there can be provided the silicon carbide substrate allowing for both improvement of channel mobility of a semiconductor device and stable characteristics thereof.
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