Indium Phosphide Substrate Manufacturing Method and Epitaxial Wafer Manufacturing Method
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United States of America Patent
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Dec 18, 2012
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Apr 20, 2009
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Abstract
The present invention affords methods of manufacturing InP substrates, methods of manufacturing epitaxial wafers, InP substrates, and epitaxial wafers whereby deterioration of the electrical characteristics can be kept under control, and at the same time, deterioration of the PL characteristics can be kept under control. An InP substrate manufacturing method of the present invention is provided with the following steps. An InP substrate is prepared (Steps S1 through S3). The InP substrate is washed with sulfuric acid/hydrogen peroxide (Step S5). After the step of washing with sulfuric acid/hydrogen peroxide (Step S5), the InP substrate is washed with phosphoric acid (Step S6).
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