Method for etching substrate

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United States of America Patent

PATENT NO 8993437
APP PUB NO 20130109171A1
SERIAL NO

13282491

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Abstract

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One or more embodiments relate to a method of making a semiconductor structure, comprising: forming a patterned metallic layer over a semiconductor substrate; forming a second layer over the patterned metallic layer; and etching the substrate.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AG85579 NEUBIBERG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Engelhardt, Manfred Villach Landskron, AT 88 1209

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