Multilayer construction

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United States of America Patent

PATENT NO 8846518
SERIAL NO

13805825

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Abstract

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A multilayer construction is disclosed. The multilayer construction includes a -II-VI semiconductor layer (110)x and a Si3N4 layer (120) disposed directly on the II-VI semiconductor layer. To improve the adhesion of the Si3N4 layer (120) a native oxide on the II-VI semiconductor layer is removed.

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Patent Owner(s)

Patent OwnerAddress
3M INNOVATIVE PROPERTIES COMPANYP O BOX 33427 ST PAUL MN 55133-3427

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ballen, Todd A St. Paul, US 26 314
Haase, Michael A St. Paul, US 186 10493
Smith, Terry L Roseville, US 167 2227
Zhang, Jun-Ying Woodbury, US 53 1011

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