Photovoltaic device including gap passivation layer and method of manufacturing the same
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United States of America Patent
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Aug 9, 2016
Grant Date -
May 9, 2013
app pub date -
Aug 7, 2012
filing date -
Nov 7, 2011
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Abstract
A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer.
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