Memory system and data storage method

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United States of America Patent

PATENT NO 9021338
APP PUB NO 20130117634A1
SERIAL NO

13604772

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Abstract

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A memory system comprises a nonvolatile memory device comprising a memory cell array comprising first and second memory blocks, and a memory controller configured to control the nonvolatile memory device to read data from the first memory block, selectively determine an error correction operation to be performed on the data after it is read from the first memory block based on a state of at least one of the first and second memory blocks, and then store the data in the second memory block.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jeong, Jaeyong Yongin-Si, KR 77 690
Joo, Sang-Hyun Hwaseongi-Si, KR 46 481
Park, Kitae Seongnam-Si, KR 154 1797
Yoon, Sangyong Seoul, KR 39 820

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