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Abstract

A method of cleaning multilayer copper wirings in ultra large scale integrated circuits after chemical-mechanical polishing, the method including: a) preparing a cleaning solution, the cleaning solution including between 0.1 and 5 wt. % of a nonionic surfactant, between 0.1 and 7 wt. % of a corrosion inhibitor, and between 0.1 and 0.6 wt. % of a chelating agent in deionized water; b) adjusting the pH value of the cleaning solution to between 7 and 8 using triethanolamine; c) during the production of ULSI, after the chemical-mechanical polishing step, washing the multilayer copper wirings with the cleaning solution at a flow rate of between 500 and 5000 mL/min for between 0.5 and 1 min; d) ultrasonic washing in the presence of deionized water under following conditions: 60 Hz frequency of ultrasound, 50° C. temperature, and between 0.5 and 1 min ultrasonic time; and e) drying the multilayer copper wirings.

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