Gas field ion source and method for using same, ion beam device, and emitter tip and method for manufacturing same
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United States of America Patent
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Sep 30, 2014
Grant Date -
May 16, 2013
app pub date -
Jul 13, 2011
filing date -
Aug 6, 2010
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Abstract
To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more.
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