Graphene transistor having air gap, hybrid transistor having the same, and methods of fabricating the same
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United States of America Patent
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Jun 3, 2014
Grant Date -
May 16, 2013
app pub date -
Nov 2, 2012
filing date -
Nov 2, 2011
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Abstract
A graphene transistor includes: a gate electrode on a substrate; a gate insulating layer on the gate electrode; a graphene channel on the gate insulating layer; a source electrode and a drain electrode on the graphene channel, the source and drain electrode being separate from each other; and a cover that covers upper surfaces of the source electrode and the drain electrode and forms an air gap above the graphene channel between the source electrode and the drain electrode.
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