Importance

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Abstract

The present invention provides a method of manufacturing a semiconductor device comprising: providing a semiconductor substrate, on which a high-k dielectric layer and a patterned gate are formed sequentially; nitridating portions of the high-k dielectric layer on the semiconductor substrate which are not covered by the gate; and forming spacers around the gate. Accordingly, the present invention further provides a semiconductor device. Portions of the high-k dielectric layer on the semiconductor substrate, which are not covered by the gate or the spacers positioned thereon, are nitridated, such that an oxygen diffusion barrier layer is formed on the surface of the high-k dielectric layer, thereby oxygen diffusion in the lateral direction into the high-k dielectric layer under the gate is prevented, and the operation performance of the semiconductor device is optimized.

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First Claim