SEMICONDUCTOR DEVICE USING GROUP III-V MATERIAL AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
May 16, 2013
app pub date -
Sep 13, 2012
filing date -
Nov 16, 2011
priority date (Note) -
Abandoned
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Abstract
Semiconductor devices using a group III-V material, and methods of manufacturing the same, include a substrate having a groove, a group III-V material layer filling in the groove and having a height the same as a height of the substrate, a first semiconductor device on the group III-V material layer, and a second semiconductor device on the substrate near the groove. The group III-V material layer is spaced apart from inner side surfaces of the groove.
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