Method for manufacturing semiconductor device
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United States of America Patent
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Aug 13, 2013
Grant Date -
May 16, 2013
app pub date -
Dec 12, 2012
filing date -
Sep 10, 2010
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Abstract
A method for manufacturing a semiconductor device includes at least forming a lower electrode comprising titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide as a primary constituent on the lower electrode, forming a first protective film comprising a titanium compound on the dielectric film, and forming an upper electrode comprising titanium nitride on the first protective film. The method can include a step of forming a second protective film on the lower electrode before the step of forming the dielectric film on the lower electrode.
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