Integrated circuit device including through-silicon via structure having offset interface
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United States of America Patent
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Nov 11, 2014
Issued Date -
N/A
app pub date -
Sep 5, 2012
filing date -
Nov 15, 2011
priority date (Note) -
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Abstract
An integrated circuit device includes a substrate through which a first through-hole extends, and an interlayer insulating film on the substrate, the interlayer insulating film having a second through-hole communicating with the first through-hole. A Through-Silicon Via (TSV) structure is provided in the first through-hole and the second through-hole. The TSV structure extends to pass through the substrate and the interlayer insulating film. The TSV structure comprises a first through-electrode portion having a top surface located in the first through-hole, and a second through-electrode portion having a bottom surface contacting with the top surface of the first through-electrode portion and extending from the bottom surface to at least the second through-hole. Related fabrication methods are also described.
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