Semiconductor device and method of testing the same
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United States of America Patent
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Jan 28, 2014
Grant Date -
May 16, 2013
app pub date -
Jun 18, 2012
filing date -
Nov 14, 2011
priority date (Note) -
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Abstract
There is provided a semiconductor device comprising, a first metal pattern formed at a first metal level and extending in a first direction, a second metal pattern formed at the first metal level, extending in a second direction that is different than the first direction, and disposed on a side of the first metal pattern to be separated from the first metal pattern, a first via structure formed on the first metal pattern, a third metal pattern formed at a second metal level that is different than the first metal level and electrically connected to the first metal pattern by the first via structure, and a first pad electrically connected to the first metal pattern and a second pad electrically connected to the third metal pattern.
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