Multi-valued logic device having nonvolatile memory device

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United States of America Patent

PATENT NO 8861268
APP PUB NO 20130121059A1
SERIAL NO

13564878

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Abstract

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A multi-valued logic device having an improved reliability includes a conversion unit configured to convert a multi level signal into a plurality of partial signals; and a plurality of nonvolatile memory devices configured to individually store the plurality of partial signals, wherein a number of bits of each of the plurality of partial signals individually stored in the plurality of nonvolatile memory devices is less than the number of bits of the multi level signal.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO KOREA SUWON SUWON GYEONGGI-DO
UNIVERSITY OF SEOUL FOUNDATION OF INDUSTRY ACADEMIC COOPERATION163 SIRIPDAERO (90 JEONNONG-DONG) DONGDAEMUN-GU SEOUL 130-743

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Hyun-sik Hwaseong-si, KR 19 155
Choi, Joong-ho Seoul, KR 3 19
Kim, Ho-jung Suwon-si, KR 62 633
Shin, Jai-kwang Anyang-si, KR 96 882

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