NON-VOLATILE MEMORY ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME
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United States of America Patent
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Issued Date -
May 16, 2013
app pub date -
Nov 8, 2012
filing date -
Nov 11, 2011
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Abstract
Non-volatile memory elements, memory devices including the same, and methods for operating and manufacturing the same may include a memory layer between a first electrode and a second electrode spaced apart from the first electrode. The memory layer may include a first material layer and a second material layer, and may have a resistance change characteristic due to movement of ionic species between the first material layer and the second material layer. At least the first material layer of the first and second material layers may be doped with a metal.
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