Semiconductor surface light-emitting element and method of manufacturing thereof
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United States of America Patent
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Apr 8, 2014
Grant Date -
May 16, 2013
app pub date -
Jun 21, 2011
filing date -
Jul 30, 2010
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Abstract
A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blend structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.
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