POLYCRYSTALLINE SILICON INGOT MANUFACTURING APPARATUS, POLYCRYSTALLINE SILICON INGOT MANUFACTURING METHOD, AND POLYCRYSTALLINE SILICON INGOT
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United States of America Patent
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Issued Date -
May 16, 2013
app pub date -
Jul 21, 2011
filing date -
Jul 22, 2010
priority date (Note) -
Abandoned
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Abstract
A polycrystalline silicon ingot manufacturing apparatus, a polycrystalline silicon ingot manufacturing method, and a polycrystalline silicon ingot are provided. The apparatus comprises: a crucible having a rectangular shape in a cross-section; an upper heater provided above the crucible; and a lower heater provided below the crucible. A silicon melt stored in the crucible is solidified from a bottom surface of the crucible upward unidirectionally. The apparatus further comprises an auxiliary heater that heats at least a bottom-surface-side portion of a sidewall of the crucible. The production yield can be improved by using the apparatus and by reducing the oxygen concentration at the location where the oxygen concentration tends to be high locally at the bottom part of the ingot.
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