Method for forming and structure of a recessed source/drain strap for a MUGFET
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United States of America Patent
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Jan 7, 2014
Grant Date -
May 16, 2013
app pub date -
Nov 28, 2012
filing date -
Sep 7, 2010
priority date (Note) -
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status (Latency Note)
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Abstract
A method and semiconductor structure includes an insulator layer on a substrate, a plurality of parallel fins above the insulator layer. Each of the fins has a central semiconductor portion and conductive end portions. At least one conductive strap is positioned within the insulator layer below the fins. The conductive strap can be perpendicular to the fins and contact the fins. The conductive strap includes recessed portions disposed within the insulator layer, below the plurality of fins, and between each of the plurality of fins, and projected portions disposed above the insulator layer, collinear with each of the plurality of fins. The conductive strap is disposed in at least one of a source region and a drain region of the semiconductor structure. A gate insulator contacts and covers the central semiconductor portion of the fins, and a gate conductor covers and contacts the gate insulator.
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