Process to remove Ni and Pt residues for NiPtSi applications using chlorine gas
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United States of America Patent
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Jun 18, 2013
Grant Date -
May 16, 2013
app pub date -
Nov 14, 2011
filing date -
Nov 14, 2011
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Abstract
The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.
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