Method of Manufacturing a Semiconductor Device
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United States of America Patent
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Issued Date -
May 16, 2013
app pub date -
Sep 10, 2012
filing date -
Nov 16, 2011
priority date (Note) -
Abandoned
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Abstract
A method of manufacturing a semiconductor device, the method including: forming a plurality of first trenches extending in one direction in at least a part of a substrate; forming a plurality of first filling layers for filling the plurality of first trenches and having protrusion portions extended from the substrate from the plurality of first trenches; forming spacers on side walls of the protrusion portions of the plurality of first filling layers so that a part of the substrate is exposed between the plurality of first filling layers; and forming a plurality of second trenches extending in parallel to the plurality of first trenches by etching the substrate exposed through the spacers.
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