Doping aluminum in tantalum silicide
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United States of America Patent
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Nov 26, 2013
Grant Date -
May 16, 2013
app pub date -
Nov 15, 2011
filing date -
Nov 15, 2011
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Abstract
Provided are methods of providing aluminum-doped TaSix films. Doping TaSix films allows for the tuning of the work function value to make the TaSix film better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSix film with an aluminum-containing compound. Another method relates to depositing a TaSix film, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSix film using tantalum, aluminum and silicon precursors.
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