METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
May 16, 2013
app pub date -
Dec 29, 2011
filing date -
Nov 10, 2011
priority date (Note) -
Abandoned
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Abstract
A method for fabricating a semiconductor device includes forming an etch target layer including an insulation layer and a metal layer over a substrate, forming a hard mask layer pattern over the etch target layer, forming a protective layer pattern which includes a region having a shape of an overhang formed in an upper portion of the hard mask layer pattern, etching the insulation layer of the etch target layer by using the first region as an etch barrier, and etching the metal layer of the etch target layer by using the second region as an etch barrier.
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