Gas supply system, substrate processing apparatus and gas supply method
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United States of America Patent
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Oct 22, 2013
Grant Date -
May 23, 2013
app pub date -
Jan 11, 2013
filing date -
Jan 4, 2006
priority date (Note) -
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Abstract
Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means.
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