Extending Radiation Tolerance By Localized Temperature Annealing Of Semiconductor Devices
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United States of America Patent
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May 23, 2013
app pub date -
Dec 1, 2011
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Nov 17, 2011
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Abstract
A method of increasing the operating life of a semiconductor device that is to be used in a harsh ionizing radiation environment including determining heating criteria for annealing the device; installing the device in an electronic apparatus; and heating the installed device with a local heating source in accordance with the heating criteria.
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