Non-volatile memory devices having dual heater configurations and methods of fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9196827
APP PUB NO 20130126510A1
SERIAL NO

13547663

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A non-volatile memory device includes a data storage structure coupled between first and second conductive lines of the memory device. The data storage structure includes a conductive lower heater element, a data storage pattern, and a conductive upper heater element sequentially stacked. At least one sidewall surface of the data storage pattern is coplanar with a sidewall surface of the upper heater element thereabove and a sidewall surface of the lower heater element therebelow. Related fabrication methods are also discussed.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI GYEONGGI-DO 16677

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Young-Kuk Seoul, KR 25 200
Oh, Gyu-Hwan Hwaseong-si, KR 30 397
Park, Doo-Hwan Yongin-si, KR 36 510

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 May 24, 2027
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00