Graphene-based photodetector including complex transparent electrode, method of manufacturing the same, and device including the same

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United States of America Patent

PATENT NO 9067783
APP PUB NO 20130126700A1
SERIAL NO

13613279

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Abstract

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A photodetector includes a substrate, a graphene layer disposed on the substrate, a first electrode disposed on the graphene layer, and a second electrode disposed on the graphene layer, where the first and second electrodes are spaced apart from each other, and where each of the first and second electrodes comprises a complex transparent electrode. The complex transparent electrode of the first electrode may have a different composition from the complex transparent electrode of the second electrode.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Jae-young Suwon-si, KR 194 3035
Ra, Chang-ho Seoul, KR 3 19
Shen, Tian-zi Seoul, KR 2 9
Yoo, Won-jong Seoul, KR 6 82

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