BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS
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United States of America Patent
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Issued Date -
May 23, 2013
app pub date -
Jan 14, 2013
filing date -
Mar 16, 2010
priority date (Note) -
Abandoned
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Abstract
In a first aspect, a metal-insulator-metal (“MIM”) stack is provided that includes a first conductive layer, a resistivity-switching layer having a metal oxide layer formed above the first conductive layer, a material layer between the first conductive layer and the resistivity-switching layer, and a second conductive layer above the resistivity-switching layer. The first conductive layer includes a multi-layer metal-silicide stack, and the material layer has a Gibbs free energy of formation per O between about −3 and −6 eV. A memory cell may be formed from the MIM stack. Numerous other aspects are provided.
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