III-V compound semiconductor epitaxy from a non-III-V substrate
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United States of America Patent
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Apr 1, 2014
Grant Date -
May 23, 2013
app pub date -
Jan 14, 2013
filing date -
Aug 11, 2008
priority date (Note) -
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Abstract
A structure comprises a substrate, a mask, a buffer/nucleation layer, and a group III-V compound semiconductor material. The substrate has a top surface and has a recess from the top surface. The recess includes a sidewall. The first mask is the top surface of the substrate. The buffer/nucleation layer is along the sidewall, and has a different material composition than a material composition of the sidewall. The III-V compound semiconductor material continuously extends from inside the recess on the buffer/nucleation layer to over the first mask.
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