Method of fabricating FinFET device and structure thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9653593
SERIAL NO

13745521

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The present disclosure provides a FinFET device and method of fabricating a FinFET device. The method includes providing a substrate, forming a fin structure on the substrate, forming a gate structure including a gate dielectric and gate electrode, the gate structure overlying a portion of the fin structure, forming a protection layer over another portion of the fin structure, and thereafter performing an implantation process to form source and drain regions.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pawlak, Bartlomiej Jan Heverlee, BE 39 433

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Nov 16, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00