Semiconductor device and method of forming the same
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United States of America Patent
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Jul 16, 2013
Grant Date -
May 23, 2013
app pub date -
Dec 14, 2012
filing date -
May 14, 2009
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor substrate having first and second regions, a first pillar transistor, and a second pillar transistor, wherein the first pillar transistor comprises a first semiconductor pillar disposed in the first region, and a first gate electrode covering a side surface of the first semiconductor pillar, wherein the second pillar transistor comprises a second semiconductor pillar disposed in the second region, and a second gate electrode covering a side surface of the second semiconductor pillar, wherein the first gate electrode is different in height from the second gate electrode, and the first and second pillar transistors form a CMOS device.
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