Method for Stacking Devices and Structure Thereof
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United States of America Patent
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app pub date -
Dec 17, 2012
filing date -
Jun 27, 2008
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Abandoned
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Abstract
A semiconductor device that has a first device that includes a first through-silicon via (TSV) structure, a first coating material disposed over the first device, the first coating material continuously extending over the first device and covering the first TSV structure, a second device disposed over the first device and within the first coating material, the second device includes a second TSV structure and a plurality of conductive bumps, the plurality of conductive bumps are positioned within the first coating material, a second coating material disposed over the second device, the second coating material continuously extends over the second device and covers the second TSV structure, and a third device disposed over the second coating material, the third device includes a third TSV structure.
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