Mechanisms of forming damascene interconnect structures

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United States of America Patent

PATENT NO 9269612
SERIAL NO

13434691

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Abstract

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An interconnect structure includes a first trench and a second trench. The second trench is wider than the first trench. Both trenches are lined with a diffusion barrier layer, and a first conductive layer is deposited over the diffusion barrier layer. A metal cap layer is deposited over the first conductive layer. A second conductive layer is deposited over the metal cap layer in the second trench.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chien-An Zhubei, TW 216 1893
Jang, Syun-Ming Hsinchu, TW 381 6833
Lin, Chun-Chieh Taichung, TW 141 1346
Liu, Wen-Jiun Zhunan Township, TW 18 111
Su, Hung-Wen Jhubei, TW 117 1406
Tsai, Ming-Hsing Chu-Pei, TW 146 1928

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