SEMICONDUCTOR DEVICES INCLUDING DUAL DAMASCENE METALLIZATION STRUCTURES
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
May 23, 2013
app pub date -
Nov 6, 2012
filing date -
Nov 21, 2011
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A semiconductor device can include a dual-damascene metallization structure that may provide a reduced resistance by providing barrier layers that are different materials. The semiconductor device can include a device layer and a lower conductive layer that can be electrically connected to the device layer. A lower barrier layer can surround the lower conductive layer and an upper conductive layer can be disposed on the lower conductive layer and can be electrically connected to the lower conductive layer. An upper barrier layer can surround the upper conductive layer and can including material that is different from a material included in the lower barrier layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully