Magneto-resistance effect element, and method for manufacturing the same

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United States of America Patent

PATENT NO 8542466
APP PUB NO 20130128391A1
SERIAL NO

13740983

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A magneto-resistance effect element, including a fixed magnetization layer of which a magnetization is substantially fixed in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer, a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof, a thin film layer, and a functional layer.

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Patent Owner(s)

  • TDK CORPORATION;TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fuji, Yoshihiko Tokyo, JP 141 1569
Fukuzawa, Hideaki Tokyo, JP 225 3236
Hara, Michiko Tokyo, JP 100 1143
Kurosaki, Yoshinari Tokyo, JP 21 532
Li, Min Milpitas, US 751 7676
Yuasa, Hiromi Tokyo, JP 136 2704
Zhang, Kunliang Milpitas, US 146 3314

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