Method for metal correlated via split for double patterning

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United States of America Patent

PATENT NO 8762899
APP PUB NO 20130130410A1
SERIAL NO

13743087

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Abstract

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A method of via patterning mask assignment for a via layer using double patterning technology, the method includes determining, using a processor, if a via of the via layer intercepts an underlying or overlaying metal structure assigned to a first metal mask. If the via intercepts the metal structure assigned to the first metal mask, assigning the via to a first via mask, wherein the first via mask aligns with the first metal mask. Otherwise, assigning the via to a second via mask, wherein the second via mask aligns with a second metal mask different from the first metal mask.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gau, Tsai-Sheng Hsinchu, TW 141 1590
Huang, Wen-Chun Tainan, TW 100 1779
Lin, Burn Jeng Hsinchu, TW 127 3214
Liu, Ru-Gun Hsinchu, TW 404 6961

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